AustralieFrV1, Main, Exploration, bibRecord, 009E45

Investigation of helium implantation induced blistering in InP

Identifieur interne : 009E45 ( Main/Exploration ); précédent : 009E44; suivant : 009E46

Investigation of helium implantation induced blistering in InP

Auteurs : R. Singh [Allemagne] ; I. Radu [Allemagne] ; R. Scholz [Allemagne] ; C. Himcinschi [Allemagne] ; U. Gösele [Allemagne] ; S. H. Christiansen [Allemagne]

Source :

Journal of luminescence [ 0022-2313 ] ; 2006.

RBID : Pascal:07-0004294

Descripteurs français

Pascal (Inist)
- Recuit, Cinétique, Equation Arrhenius, Dépendance temps, Energie activation, Cloquage, Endommagement, Microscopie électronique transmission, Défaut, Implantation ion, Pastille électronique, Indium phosphure, Semiconducteur III-V, InP, 6172V.

English descriptors

KwdEn :
- Activation energy, Annealing, Arrhenius equation, Blisters, Damage, Defects, III-V semiconductors, Indium phosphides, Ion implantation, Kinetics, Time dependence, Transmission electron microscopy, Wafers.

Abstract

Four-inch InP wafers were implanted with 100 keV helium ions with a dose of 5 x 10¹⁶ cm^-2 and subsequently annealed in air in the temperature range of 225 400°C in order to determine the blistering kinetics of these wafers. An Arrhenius plot of the blistering time as a function of reciprocal temperature revealed two different activation energies for the formation of surface blisters in InP. The activation energy was found to be 0.30eV in the higher temperature regime of 300-400°C and 0.74eV in the lower temperature regime of 225-300°C. The implantation induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 400-700 nm from the surface of InP. The damage band was found to be decorated with a large number of nanovoids having diameters between 2 and 5 nm. These nanovoids served as precursors for the formation of microcracks inside InP upon annealing, which led to the formation of surface blisters.

Affiliations:

Allemagne

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of helium implantation induced blistering in InP</title>
<author><name sortKey="Singh, R" sort="Singh, R" uniqKey="Singh R" first="R." last="Singh">R. Singh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Radu, I" sort="Radu, I" uniqKey="Radu I" first="I." last="Radu">I. Radu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Scholz, R" sort="Scholz, R" uniqKey="Scholz R" first="R." last="Scholz">R. Scholz</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Himcinschi, C" sort="Himcinschi, C" uniqKey="Himcinschi C" first="C." last="Himcinschi">C. Himcinschi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gosele, U" sort="Gosele, U" uniqKey="Gosele U" first="U." last="Gösele">U. Gösele</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Christiansen, S H" sort="Christiansen, S H" uniqKey="Christiansen S" first="S. H." last="Christiansen">S. H. Christiansen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Martin Luther Universität Halle-Wittenberg, Hoher Weg 8</s1>
<s2>06099 Halle</s2>
<s3>DEU</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06099 Halle</wicri:noRegion>
<wicri:noRegion>Hoher Weg 8</wicri:noRegion>
<wicri:noRegion>06099 Halle</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">07-0004294</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 07-0004294 INIST</idno>
<idno type="RBID">Pascal:07-0004294</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">003F81</idno>
<idno type="wicri:Area/PascalFrancis/Curation">002107</idno>
<idno type="wicri:Area/PascalFrancis/Checkpoint">003F33</idno>
<idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">003F33</idno>
<idno type="wicri:doubleKey">0022-2313:2006:Singh R:investigation:of:helium</idno>
<idno type="wicri:Area/Main/Merge">00A955</idno>
<idno type="wicri:Area/Main/Curation">009E45</idno>
<idno type="wicri:Area/Main/Exploration">009E45</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Investigation of helium implantation induced blistering in InP</title>
<author><name sortKey="Singh, R" sort="Singh, R" uniqKey="Singh R" first="R." last="Singh">R. Singh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Radu, I" sort="Radu, I" uniqKey="Radu I" first="I." last="Radu">I. Radu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Scholz, R" sort="Scholz, R" uniqKey="Scholz R" first="R." last="Scholz">R. Scholz</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Himcinschi, C" sort="Himcinschi, C" uniqKey="Himcinschi C" first="C." last="Himcinschi">C. Himcinschi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gosele, U" sort="Gosele, U" uniqKey="Gosele U" first="U." last="Gösele">U. Gösele</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Christiansen, S H" sort="Christiansen, S H" uniqKey="Christiansen S" first="S. H." last="Christiansen">S. H. Christiansen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max Planck Institute of Microstructure Physics, Weinberg 2</s1>
<s2>06120 Halle</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Martin Luther Universität Halle-Wittenberg, Hoher Weg 8</s1>
<s2>06099 Halle</s2>
<s3>DEU</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>06099 Halle</wicri:noRegion>
<wicri:noRegion>Hoher Weg 8</wicri:noRegion>
<wicri:noRegion>06099 Halle</wicri:noRegion>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
<imprint><date when="2006">2006</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term>
<term>Annealing</term>
<term>Arrhenius equation</term>
<term>Blisters</term>
<term>Damage</term>
<term>Defects</term>
<term>III-V semiconductors</term>
<term>Indium phosphides</term>
<term>Ion implantation</term>
<term>Kinetics</term>
<term>Time dependence</term>
<term>Transmission electron microscopy</term>
<term>Wafers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term>
<term>Cinétique</term>
<term>Equation Arrhenius</term>
<term>Dépendance temps</term>
<term>Energie activation</term>
<term>Cloquage</term>
<term>Endommagement</term>
<term>Microscopie électronique transmission</term>
<term>Défaut</term>
<term>Implantation ion</term>
<term>Pastille électronique</term>
<term>Indium phosphure</term>
<term>Semiconducteur III-V</term>
<term>InP</term>
<term>6172V</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Four-inch InP wafers were implanted with 100 keV helium ions with a dose of 5 x 10<sup>16</sup>
 cm<sup>-2</sup>
 and subsequently annealed in air in the temperature range of 225 400°C in order to determine the blistering kinetics of these wafers. An Arrhenius plot of the blistering time as a function of reciprocal temperature revealed two different activation energies for the formation of surface blisters in InP. The activation energy was found to be 0.30eV in the higher temperature regime of 300-400°C and 0.74eV in the lower temperature regime of 225-300°C. The implantation induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 400-700 nm from the surface of InP. The damage band was found to be decorated with a large number of nanovoids having diameters between 2 and 5 nm. These nanovoids served as precursors for the formation of microcracks inside InP upon annealing, which led to the formation of surface blisters.</div>
</front>
</TEI>
<affiliations><list><country><li>Allemagne</li>
</country>
</list>
<tree><country name="Allemagne"><noRegion><name sortKey="Singh, R" sort="Singh, R" uniqKey="Singh R" first="R." last="Singh">R. Singh</name>
</noRegion>
<name sortKey="Christiansen, S H" sort="Christiansen, S H" uniqKey="Christiansen S" first="S. H." last="Christiansen">S. H. Christiansen</name>
<name sortKey="Christiansen, S H" sort="Christiansen, S H" uniqKey="Christiansen S" first="S. H." last="Christiansen">S. H. Christiansen</name>
<name sortKey="Gosele, U" sort="Gosele, U" uniqKey="Gosele U" first="U." last="Gösele">U. Gösele</name>
<name sortKey="Himcinschi, C" sort="Himcinschi, C" uniqKey="Himcinschi C" first="C." last="Himcinschi">C. Himcinschi</name>
<name sortKey="Radu, I" sort="Radu, I" uniqKey="Radu I" first="I." last="Radu">I. Radu</name>
<name sortKey="Scholz, R" sort="Scholz, R" uniqKey="Scholz R" first="R." last="Scholz">R. Scholz</name>
</country>
</tree>
</affiliations>
</record>

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Investigation of helium implantation induced blistering in InP

Investigation of helium implantation induced blistering in InP

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri